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an AMP company
==
z
I
RF M'OSFET 2 - 175 MHz
Features
Power Transistor,
4OW,28V
DU2840S
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices
..
Absolute Maximum Ratings at 25C
Parameter Drain-Source Gate-Source Drain-Source Voltage Voltage Current 1 1 Symbol V DS V GS `0s PD T, T STG 8 JC 1 ( Rating 65 20 Units V V 1 * W "C "C 1
A
8
125 200 -55 to +150 1.4
Power Dissipation JunctionTemperature StorageTemperature Thermal Resistance
24.64
24.09
.970
.980
B
i 18.29 t 18.54 1 ,720 1 ,730
D
"CiW
E
9.47
&22 564 292
9.73
6.48 5.79 3.30
-373 .245 ,222 .115
,393 255 E28 .I30
F mG
Electrical Characteristics
Parameter Drain-Source I~~~ Drain-Source Gate-Source Breakdown Voltage
at 25C
) ) Symbol BV,,, `DSS '05s V GSrnHI GM C 15s C 055
I
1 Min 1 55
1 Max 1 2.0 2.0
( Units ) V mA pA V S pF pF pF 1 dB % -
) ) V,,=O.OV, V,,=28.0 v,,=20.0 V,,=lO.O V,,=lO.O V,=28.0 V,,=28.0 V,,=28.0 1 V,,=28.0 V,,=28.0 V,,=28.0 l,,=lO.OmA V, V,,=O.O V
Test Conditions
I
I
Leakage Current Leakage Current
v, v,,=o.o
v
Gate Threshold Voltage ForwardTransconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load MismatchTolerance
Specifications
2.0 1
6.0 90 80 16
V, 1,,=200.0 mA V, 1,,=2000.0 V, F=l .O MHz V. F=l .O MHz V, F=l .O MHz V, I,,=200 V, I,,=200 V, I,,=200 mA, P,,,-40.0 _. mA, P,,=40.0 mA, P,,=40.0 W, F=l75 MHz I mA, AVo,=l .O V, 80 us Pulse
C E1c.s -G,
`1D
1
13 60 -
3O:l
W, F=175 MHz W, F=175 MHz
VSWR-T
Subject to Change Without Notice.
M/A-COM,
North America: Tel. Fax (800) (800) 366-2266 618-8883 = Asia/Pacific: Tel. Fax +81 (03) 3226-1671 ~81 (03) 3226-1451 = Europe: Tel. Fax +44 (1344) +44 (1344)
inc.
869 595 300 020
RF MOSFET Power Transistor, 4OW, 28V
DU2840S
V2.00
Typical Broadband Performance Curves
GAIN vs FREQUENCY V,,=28 V I,,=200 mA Po,p40
EFFICIENCY
W 1
vs FREQUENCY
mA P,,,=40 W
301
V,,=28
V I,,=200
10 0
,25 50 FREQUENCY 100 (MHz) 150 180
0
25
50 FREOUENCY
loo (MHz)
150
175
POWER OUTPUT vs POWER INPUT
60 V,,=28 V IDO= 00 mA
POWER OUTPUT
F=l75
vs SUPPLY
VOLTAGE
MHz I,,=200
mA P,,=l .O W
0.3 0.5 POWER INPUT (W)
29 SUPPLY VOLTAGE (V)
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
North America: Tel. (800) Fax (800) 366-2266 618-8883 s Asia/Pacific: Tel. Fax +81 +81 (03) 3226-1671 (03) 3226-1451
n
Europe:
Tel. Fax
+44 (1344) +44 (1344)
869 595 300 020
RF MOSFET Power Transistor,
4OW, 28V
Typical Device Impedance
Frequency (MHz) 30 50
Z,, (OHMS) 12.0-j6.8 10.0 - i 6.5 1 6.0 - i 5.5
1.1
ZLoAD (OHMS) 6.5 -j 1.5 6.0 - i 1.8 1 5.5-il.8 3.5 - j 1.8
I
100
200
- j 3.0
V,,=28 V, I,,=200 mA, P,,,=40 Watts Z,, is the series equivalent input impedance of the device from gate to source. Z LOAD the series equivalent load impedance as measured from drain to ground. is
RF Test Fixture
VGS J3
VDS J4 )
VDS = 28 VOLTS IDQ = 200mA I
AT
1
c9
Rl RF IN Jl Cl IY Al Ll I Ql L2
L3 RF OUT C8 IY Al c7 I J2
1.
b
C6 `I
-
PARTS LIST Cl ,C?,C8 c2 C3,C6 C-4$5 c9 Ll l2 L3 TRIMMER TRIMMER CAPACITOR CAPACITOR 5OpF CAPACITOR CAPACITOR 0.004uF 5OuF 50 VOLT 4-4OpF 9-18OpF
CAPACITOR
FEEDTHROUGH ELECTROLYTIC
NO. 12 AWG COPPER WIRE X 1.25" NO. 12 AWG COPPER WIRE X 1.50" 8 TURNS OF NO. 22 AWG ENAMEL WIRE ON `0.25". CLOSE WOUND
Rl 01 BOARD
RESISTOR DU2840S FR4 0.062
1 OOK OHMS
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
North America: Tel. (800) 366-2266 Fax (800) 618-8883
n
Asia/Pacific:
Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451
H
Europe:
Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020

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